Batch type equipment of chemical dry cleaning for remoral of native oxide in Narrow and Deep-contact patterns of advanced semiconductor.


  • Damage-free (remote plasma and low-temperature process)
  • High throughput and low CoO
  • Processing in batches of fifty wafers
  • Superior uniformity of etching (5% or less per batch)
  • Easy maintenance (no side maintenance access is required)
  • Small foot print compare to cluster type equipment
  • 50% lower self-aligned contact resistance compared to current wet process
  • The Smallest foot print


  • Pre-cleaning for self-aligned contact (SAC) formation
  • Pre-cleaning for capacitor formation
  • Pre-cleaning for epitaxial growth
  • Pre-cleaning for Co or Ni salicide


Model RISETM-300
Plasma Source Microwave Power Supply
Configuration EFEM + LL + PM
Wafer Size 300mm diameter
Wafer Stage Ceramic Board (50 wafers/batch)
Pumping System Etching Module:Mechanical booster pump +DRP
Control System FAPC+TFT Touch Panel
Gas Supply 3 lines
Application SAC, Capacitor, Epitaxial growth, Pretreatment for salicide
Electricity Main Power Supply 1 AC±208V, 50/60Hz, 3phase118A, 41kVA
Main Power Supply 2 AC±208V, 50/60Hz, 3phase83A, 28.6 kVA
Pump Rack AC200V, 50/60Hz, 3phase86.5A, 30kVA
Cooling Water Main System 0.2 - 0.5MPa
20 - 25ºC
20L/min x 2lines
DRP / Chiller 0.2 - 0.5MPa
20 - 25ºC
Compressed Air 0.4 - 0.7MPa
N2 Gas 0.6 - 0.9MPa
Process gas Chamber Vent, Pump Purge 0.6 - 0.9MPa
Exhaust Main System 20m3/min
Exhaust for Gas Box (Combustible Gas Side) 2.0m3/min
Exhaust for Gas Box (Oxidizing Gas Side) 0.3m3/min
Exhaust for Pump Rack 10.5m3/min