Production type dry etching system with ULVAC original NLD (Neutral Loop Discharge) Plasma Source.
- ICP type etching chamber, CCP or Ashing chamber is also selectable as 2nd chamber.
- Low process pressure, high density plasma, low electron temperature are perfect for quartz glass, Pyrex, LN, LT etc.
- Good profile control and surface roughness.
- Good performance of deep SiO2 etching with PR.
- High etching rate of Quartz > 1μm/min, Pyrex > 0.8 μm/min.
- Excellent uniformity control.
- Optical Devices (Wave guide, amplifier, optical switch etc), Micro lens, Photonics, μ-TAS etc.