LED Mass Productive Dry Etching Tool NE-950EX
- Higher Through-Put（by 140% than conventional systems)3 wafers batch processing availability in 6inch dia.
7 wafers batch processing availability in 4inch dia.
12 wafers batch processing availability in 3 inch dia.
29 wafers batch processing availability in 2 inch dia.
- ICP with magnetic field(ISM *1), high density plasma source which has over 600 delivery record in compound semiconductor market is equipped.*1:ULVAC Patent No.3188353
- Propriately Star electrode*2 which has self-cleaning function for deposited material from RF window is equipped.*2:ULVAC Patent No.3429391
- High mentenancability, stability, reliability are achieved through re-deposition preventative designing.
- Dry etching technology availability for various process application. (GaN, Sapphire, Metal, ITO, SiC, AlN, ZnO, 4 elements compound semiconductor materials, etc.)
- Various Option availability
- Dry etching of GaN, Sapphire, metal, ITO etc for LED product