NE950EX

LED Mass Productive Dry Etching Tool NE-950EX

Features

  • Higher Through-Put(by 140% than conventional systems)3 wafers batch processing availability in 6inch dia.

    7 wafers batch processing availability in 4inch dia.

    12 wafers batch processing availability in 3 inch dia.

    29 wafers batch processing availability in 2 inch dia.

  • ICP with magnetic field(ISM *1), high density plasma source which has over 600 delivery record in compound semiconductor market is equipped.*1:ULVAC Patent No.3188353
  • Propriately Star electrode*2 which has self-cleaning function for deposited material from RF window is equipped.*2:ULVAC Patent No.3429391
  • High mentenancability, stability, reliability are achieved through re-deposition preventative designing.
  • Dry etching technology availability for various process application. (GaN, Sapphire, Metal, ITO, SiC, AlN, ZnO, 4 elements compound semiconductor materials, etc.)
  • Various Option availability

Applications

  • Dry etching of GaN, Sapphire, metal, ITO etc for LED product